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HY27UF084G2M-TPCB
IC, SM 4GB FLASH MEMORY, NAND
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ManufacturerHYNIX SEMICONDUCTOR
Manufacturer Part NoHY27UF084G2M-TPCB
Order Code1182455
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerHYNIX SEMICONDUCTOR
Manufacturer Part NoHY27UF084G2M-TPCB
Order Code1182455
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
Memory Density4Gbit
Memory Configuration-
Interfaces-
IC Case / PackageTSOP
No. of Pins48Pins
Clock Frequency Max-
Access Time-
Supply Voltage Min2.7V
Supply Voltage Max3.6V
IC MountingSurface Mount
Operating Temperature Min0°C
Operating Temperature Max70°C
Product Range3.3V Parallel NAND Flash Memories
Technical Specifications
Memory Density
4Gbit
Interfaces
-
No. of Pins
48Pins
Access Time
-
Supply Voltage Max
3.6V
Operating Temperature Min
0°C
Product Range
3.3V Parallel NAND Flash Memories
Memory Configuration
-
IC Case / Package
TSOP
Clock Frequency Max
-
Supply Voltage Min
2.7V
IC Mounting
Surface Mount
Operating Temperature Max
70°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85423261
US ECCN:3A991.b.2.b
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002188